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US 8,940,620 B2Granted
Composite wafer for fabrication of semiconductor devices
AssigneePower Integrations, Inc.
InventorsAlexei Koudymov, Jamal Ramdani, Kierthi Swaminathan
Life of this patent
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Abstract
A composite wafer includes a first substrate having a first vertical thickness and a top surface, the top surface being prepared in a state for subsequent semiconductor material epitaxial deposition. A carrier substrate is disposed beneath the first substrate. The carrier substrate has a second vertical thickness greater than the first vertical thickness. An interlayer bonds the first substrate to the carrier substrate.
Claims14
A method comprising:
- (a) forming an interlayer that bonds a top surface of a carrier substrate to a bottom surface of a first substrate, the first substrate being of a first semiconductor material type and also having a top surface and a first thickness, the carrier substrate being of a second semiconductor material type and having a second thickness greater than the first thickness, the interlayer comprising silicon dioxide;
- (b) forming one or more nitride layers over the top surface of the first substrate;
- (c) fabricating nitride-based semiconductor devices in the one or more nitride layers;
- and
- (d) de-bonding the top surface of the carrier substrate from the bottom surface of the first substrate.
2 more elements
Dependencies are inferred from the claim text.