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US 8,940,611 B2Granted
Semiconductor integrated circuit device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsWeon-Hong Kim, Min-Woo Song, Jung-Min Park
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Abstract
A semiconductor integrated circuit device includes a lower electrode formed on a substrate, a first dielectric layer formed of a metal nitride layer, a metal oxynitride layer, or a combination thereof, on the lower electrode, a second dielectric layer formed on the first dielectric layer that includes a zirconium oxide layer, and an upper electrode formed on the second dielectric layer.
Claims7
A method of fabricating a semiconductor integrated circuit device, comprising:
- forming a lower electrode on a substrate;
- forming a first dielectric layer of zirconium nitride
- forming a second dielectric layer as a ZAZ layer including a zirconium oxide layer ZrO, an aluminum oxide layer AlO, and a zirconium oxide layer ZrO that are sequentially laminated on the first dielectric layer;
- and
- forming an upper electrode on the second dielectric ZAZ layer, wherein said first dielectric layer prevents the lower electrode from oxidizing during the forming of the second dielectric layer.
2 more elements
Dependencies are inferred from the claim text.