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US 8,940,600 B2Granted
Method for fabricating semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsChun-Wei Hsu, Po-Cheng Huang, Ren-Peng Huang, Jie-Ning Yang, Chia-Lin Hsu, Teng-Chun Tsai, Chih-Hsun Lin, Chang-Hung Kung, Yen-Ming Chen, Yu-Ting Li
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Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation (STI) on the resistor region of the substrate; forming a tank in the STI; and forming a resistor in the tank and on two sides of the top surface of the STI outside the tank.
Claims8
A method for fabricating semiconductor device, comprising:
- providing a substrate having a transistor region and a resistor region;
- forming a shallow trench isolation (STI) on the resistor region of the substrate;
- forming a tank in the STI;
- and
- forming a resistor in the tank and on two sides of the top surface of the STI outside the tank.
2 more elements
Dependencies are inferred from the claim text.