Thin film transistor and method for fabricating the same
AssigneeChunghwa Picture Tubes, Ltd.
InventorsYen-Yu Huang, Hsi-Ming Chang
Life of this patent
Estimating the term…
Abstract
The present provides a method for fabricating a thin film transistor including following steps. A substrate is provided. A gate is formed above the substrate. A first source is formed above the substrate. A channel is formed, in which one end of the channel contacts with the first source. A stop layer covering the one end of the channel and exposing another end of the channel is formed. A drain connected with the other end of the channel is formed. Moreover, the present invention also provides a thin film transistor fabricated by the method.
Claims12
A method for fabricating a thin film transistor, comprising:
- providing a substrate;
- forming a gate above the substrate;
- forming a first source above the substrate;
- forming a channel, wherein one end of the channel contacts with the first source;
- forming an etch stop layer, wherein the etch stop layer at least covers the one end of the channel which contacts with the first source and exposes another end of the channel;
- forming a drain, wherein the drain contacts with said another end of the channel;
- and
- forming a second source above the first source while forming the drain.
A thin film transistor, comprising:
- a substrate;
- a first source, disposed above the substrate;
- a channel, wherein one end of the channel contacts with the first source;
- an etch stop layer, wherein the etch stop layer at least covers the one end of the channel which contacts with the first source and exposes another end of the channel;
- a drain, contacting with another end of the channel, wherein the first source and the drain belong to different layers;
- and
- a gate, overlapping the channel.
Dependencies are inferred from the claim text.