Spike anneal residence time reduction in rapid thermal processing chambers

A method of processing a substrate, comprising:

• positioning a substrate on a substrate support within a chamber, the substrate positioned a first distance from a cooling plate within the chamber;
• applying heat to a substrate using a plurality of lamps to increase a temperature of the substrate to a predetermined temperature, wherein a process gas comprising nitrogen, argon, or helium is provided to the chamber while applying heat to the substrate;
• ceasing the application of heat after the substrate has reached the predetermined temperature;
• increasing a flow rate of the process gas provided to and removed from the chamber using a high speed electric valve;
• positioning the substrate a second distance from the cooling plate, wherein the second distance is less than the first distance;
• decreasing the temperature of the substrate;
• and
• removing the substrate from chamber.

A method of processing a substrate, comprising:

• positioning a substrate on a substrate support within a chamber, the substrate having an edge ring disposed therearound;
• applying heat to a substrate using a plurality of lamps to increase a temperature of the substrate to a predetermined temperature greater than about 600 degrees Celsius, wherein a process gas comprising nitrogen, argon, or helium is provided to the chamber while applying heat to the substrate;
• ceasing the application of heat after the substrate has reached the predetermined temperature;
• increasing a flow rate of the process gas provided to and removed from the chamber using a high speed electric valve;
• positioning the substrate about 100 microns to about 200 microns from a cooling plate;
• decreasing the temperature of the substrate;
• and
• removing the substrate from chamber.