Fast recovery diode

A fast recovery diode comprising:

• a base layer of a first conductivity type, the base layer having a cathode side and an anode side opposite the cathode side;
• an anode buffer layer of a second conductivity type having a first depth and a first maximum doping concentration on the anode side;
• an anode contact layer of the second conductivity type having a second depth, which is lower than the first depth, and a second maximum doping concentration, which is higher than the first maximum doping concentration;
• a space charge region of the anode junction at a breakdown voltage, which is located between a third depth and the cathode side, the third depth being arranged between the first and the second depth, the first, second and third depths being measured from the anode side;
• a defect layer with a defect peak, which is arranged in the anode buffer layer between the second depth and the third depth,
• wherein the anode buffer layer has a first surface which borders the base layer at the first depth, a second surface which borders the anode contact layer at the second depth, and first and second ends, and
• wherein the entirety of the defect layer extends continuously between the first and second surfaces and the first and second ends of the anode buffer layer.