Nonvolatile semiconductor memory device including silicon germanium semiconductor layer

A nonvolatile semiconductor memory device comprising:

• a stacked body including a plurality of conductive layers and a plurality of first insulating layers alternately stacked;
• a second insulating layer provided on the stacked body;
• a select gate provided on the second insulating layer;
• a memory film provided on an inner wall of a memory hole penetrating through the stacked body, the second insulating layer, and the select gate in a stacking direction;
• a channel body provided inside the memory film;
• a first semiconductor layer provided on an upper surface of the channel body;
• and
• a second semiconductor layer provided on the first semiconductor layer,
• the first semiconductor layer containing silicon germanium,
• the second semiconductor layer containing silicon germanium doped with a first impurity,
• a boundary between the first semiconductor layer and the second semiconductor layer being provided in the same position as a position of an upper end of the select gate.