US 8,912,569 B2 · Hybrid transistor

Abstract

A hybrid transistor (58) has a substrate (42) with a first (e.g., P type) well region (46) and a second (e.g., N type) well region (44) with an NP or PN junction (43) therebetween. A MOS portion (70-3) of the hybrid transistor (58) has an (e.g., N type) source region (48) in the first well region (46) and a gate conductor (52) overlying and insulated from the well regions (46, 44) that extends laterally at least to the junction (43). A drain or anode (D/A) portion (71-3) in the second well region (44) collects current 56 from the source region (48), and includes a bipolar transistor (78) having an (e.g., N+) emitter region (64), a (e.g., P type) base region (59) and a (e.g., N type) collector region (62) laterally separated from the junction (43). Different LDMOS-like or IGBT-like properties are obtained depending on whether the current 56 is extracted from the hybrid transistor (58) via the bipolar transistor (78) base (59) or emitter (64) or both. The bipolar transistor (78) is desirably a vertical hetero-junction transistor.

Claims14

Dependent claims

A hybrid transistor, comprising:

a substrate having therein a first well region of a first conductivity type, a second well region of a second, opposite, conductivity type, extending substantially to a first surface of the substrate, the first and second well regions forming an NP or PN junction therebetween;
a MOS portion having a source region of the second conductivity type extending to the first surface in the first well region, and having a gate conductor overlying and insulated from the first surface at least over the first well region with a first lateral end proximate the source region and a second lateral end extending at least to the NP or PN junction;
and
a drain or anode (D/A) portion in the second well region, the D/A portion comprising a bipolar transistor having an emitter region of the second conductivity type, a base region of the first conductivity type communicating with the emitter region, and a collector region of the second conductivity type communicating with the base region, wherein the collector region is located in the second well region laterally separated from the NP or PN junction.

1 more element

Dependencies are inferred from the claim text.

Hybrid transistor

Life of this patent

Hybrid transistor

Life of this patent

Abstract

Claims14