Thin film transistor and display device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShinji Maekawa
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Abstract
The present invention provides a technique by which a component forming a display device, such as a wiring can be formed with good adhesion. In the invention, a component forming a thin film transistor, a display device, or the like is formed with a material which is the same as at least one of the substances forming the formation subject surface added (mixed); thus, adhesion between the component and the formation subject is improved. An insulating layer formed over the component is formed with a laminate of a first insulating layer containing an organic material and a second insulating layer containing an inorganic material; thus, the insulating layer sufficiently covers irregularities on the surface of the component, and is also dense enough so as to be reliable as an insulating layer.
Claims17
A display device comprising:
- a substrate;
- a gate electrode comprising a particle of an oxide on the substrate, wherein the particle of an oxide contains a material which is contained in the substrate;
- a first insulating layer containing an organic material over the gate electrode;
- a second insulating layer containing an inorganic material over the first insulating layer;
- a semiconductor layer over the second insulating layer;
- and
- a source electrode layer and a drain electrode layer over and in contact with the semiconductor layer and the second insulating layer,
- wherein the source electrode layer and the drain electrode layer comprise the particle of an oxide.
A display device comprising:
- a substrate;
- a gate electrode comprising a particle of a nitride on the substrate, wherein the particle of a nitride contains a material which is contained in the substrate;
- a first insulating layer containing an organic material over the gate electrode;
- a second insulating layer containing an inorganic material over the first insulating layer;
- a semiconductor layer over the second insulating layer;
- and
- a source electrode layer and a drain electrode layer over and in contact with the semiconductor layer and the second insulating layer,
- wherein the source electrode layer and the drain electrode layer comprise the particle of a nitride.
Dependencies are inferred from the claim text.