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US 8,912,489 B2Granted
Defect removal process
AssigneeGlobalfoundries Inc.
InventorYayi Wei
Life of this patent
Estimating the term…
Abstract
A process is provided for the removal of defects, for example, micro-bridging defects during device fabrication. In one aspect, a method includes: obtaining a wafer after lithography processing and exposing the wafer to at least one electron beam. In another aspect, a system includes: selecting a substrate with micro-bridging defects after the substrate undergoes lithography processing; preparing the substrate for exposure to at least one electron beam; and exposing the substrate to the at least one electron beam.
Claims17
A method, comprising:
- obtaining a wafer with a photo resist layer after lithography processing;
- and
- exposing the wafer with the photo resist layer to at least one electron beam using a critical dimension scanning electron microscope to remove micro-bridging defects from the photo resist layer;
- wherein the at least one electron beam is a uniform electron beam.
1 more element
A system, comprising:
- selecting a substrate with micro-bridging defects after the substrate undergoes lithography processing;
- preparing the substrate for exposure to at least one electron beam;
- and
- exposing the substrate to the at least one electron beam with a critical dimension scanning electron microscope to remove the micro-bridging defects.
1 more element
A method, comprising:
- obtaining a wafer after lithography processing;
- and
- exposing the wafer to at least one electron beam from a critical dimension scanning electron microscope to remove micro-bridging defects from the wafer.
Dependencies are inferred from the claim text.