Laser annealing
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsChyiu Hyia Poon, Alex K H See, Meisheng Zhou
Life of this patent
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Abstract
A system for and method of processing an article such as a semiconductor wafer is disclosed. The wafer includes first and second surfaces which are segmented into a plurality of first and second zones. The first surface of the wafer, for example, on which devices or ICs are formed is processed by, for example, laser annealing while the second surface is heated with a backside heating source. Corresponding, or at least substantially corresponding, zones on the first and second surfaces are processed synchronously to reduce variations of post laser anneal thermal budget across the wafer.
Claims23
A method of semiconductor fabrication which reduces large variations of resistance across a semiconductor wafer comprising:
- providing the semiconductor wafer having first and second opposing surfaces, the first surface is segmented into a plurality of first zones and the second surface is segmented into a plurality of second zones, wherein the first zones on the first surface have at least substantially corresponding second zones on the second surface;
- processing the first zones on the first surface in a first ordered sequence to activate dopants in the semiconductor wafer;
- and
- processing the corresponding second zones on the second surface in a second ordered sequence,
- wherein processing the first and corresponding second zones in the first and second ordered sequences simultaneously and synchronously reduces the problem of large variations of resistance across the semiconductor wafer.
A method of fabricating a semiconductor device comprising:
- providing a semiconductor wafer having first and second opposing surfaces, the first surface is segmented into a plurality of first zones and the second surface is segmented into a plurality of second zones, wherein the first zones on the first surface have at least substantially corresponding second zones on the second surface;
- processing the first zones on the first surface in a first ordered sequence to activate dopants in the semiconductor wafer;
- and
- processing the corresponding second zones on the second surface in a second ordered sequence,
- wherein processing the first and corresponding second zones in the first and second ordered sequences reduce the problem of large variations of resistance across the semiconductor wafer.
A method of semiconductor fabrication comprising:
- providing a semiconductor wafer having first and second opposing surfaces, the first surface is segmented into a plurality of first zones and the second surface is segmented into a plurality of second zones, wherein the first zones on the first surface have at least substantially corresponding second zones on the second surface;
- processing the first zones on the first surface in a first ordered sequence in a first direction to activate dopants in the semiconductor wafer;
- processing the corresponding second zones on the second surface in a second ordered sequence in the same first direction,
- wherein processing the first and corresponding second zones in the first and second ordered sequences simultaneously reduce the problem of large variations of resistance across the semiconductor wafer.
Dependencies are inferred from the claim text.