Semiconductor device having blocking pattern and method for fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJin-Bum Kim, Ha-Kyu Seong
Life of this patent
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Abstract
A method for fabricating a semiconductor device is provided. The method includes forming a gate pattern which intersects a fin-type active pattern protruding upward from a device isolation layer. A first blocking pattern is formed on a portion of the fin-type active pattern, which does not overlap the gate pattern. Side surfaces of the portion of the fin-type active pattern are exposed. A semiconductor pattern is formed on the exposed side surfaces of the portion of the fin-type active pattern after the forming of the first blocking pattern.
Claims19
A method for fabricating a semiconductor device, the method comprising:
- forming a dummy gate pattern intersecting a fin-type active pattern protruding upward from a device isolation layer;
- forming a first blocking pattern on at least a portion of the fin-type active pattern, wherein the first blocking pattern does not overlap the dummy gate pattern and exposes side surfaces of the portion of the fin-type active pattern;
- forming a semiconductor pattern on the exposed side surfaces of the portion of the fin-type active pattern after forming the first blocking pattern;
- forming an insulating layer which covers the dummy gate pattern and the fin-type active pattern after forming the dummy gate pattern and before forming the first blocking pattern;
- and
- forming a spacer on side surfaces of the dummy gate pattern by etching the insulating layer.
A method for fabricating a semiconductor device, the method comprising:
- forming a fin-type active pattern extending in a first direction and protruding upward from a device isolation layer, wherein the fin-type active pattern comprises a first region and a second region disposed on two opposite sides of the first region;
- forming a dummy gate pattern which extends in a second direction different from the first direction and which overlaps the first region of the fin-type active pattern;
- forming a first blocking pattern which exposes side surfaces of the second region of the fin-type active pattern, wherein the first blocking pattern covers a top surface of the second region of the fin-type active pattern without covering a top surface of the first region of the fin-type active pattern, wherein the first blocking pattern is not interposed between the dummy gate pattern and the fin-type active pattern;
- and
- forming a source/drain by selectively growing an epitaxial layer on the side surfaces of the second region of the fin-type active pattern after forming the first blocking pattern.
A method for fabricating a semiconductor device, the method comprising:
- forming a fin-type active pattern on a substrate, wherein the fin-type active pattern protrudes substantially perpendicular to the substrate and includes a first portion and a second portion positioned at two opposite sides of the first portion;
- forming a blocking pattern on an upper surface of the second portion;
- forming a semiconductor pattern on two opposite side surfaces of the second portion, wherein the two opposite side surfaces of the second portion abut the first portion, after forming the blocking pattern;
- and
- forming a dummy gate pattern on the first portion of the fin-type active pattern, wherein the blocking pattern is not interposed between the dummy gate pattern and the fin-type active pattern.
Dependencies are inferred from the claim text.