Thin-film semiconductor device and method of manufacturing the same
AssigneesPanasonic Corporation, Panasonic Liquid Crystal Display Co., Ltd.
InventorsHiroshi Hayashi, Takahiro Kawashima, Genshiro Kawashi
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a thin-film semiconductor device according to the present disclosure includes: preparing a substrate; forming a gate electrode above the substrate; forming a first insulating film on the gate electrode; forming a semiconductor thin film that is to be a channel layer, on the first insulating film; forming a second insulating film on the semiconductor thin film; irradiating the second insulating film with a beam so as to increase a transmittance of the second insulating film; and forming a source electrode and a drain electrode above the channel layer.
Claims12
A method of manufacturing a thin-film semiconductor device, comprising:
- preparing a substrate;
- forming a gate electrode above the substrate;
- forming a first insulating film on the gate electrode;
- forming a semiconductor thin film that is to be a channel layer, on the first insulating film;
- forming a second insulating film, that is formed of an organic material film, on the semiconductor thin film;
- irradiating the second insulating film with a beam to increase a transmittance of the second insulating film;
- and
- forming a source electrode and a drain electrode above the channel layer,
- wherein in the irradiating, the second insulating film is mineralized by irradiation of the beam.
Dependencies are inferred from the claim text.