High frequency amplifier

A high frequency amplifier, comprising:

• a power amplification element;
• a temperature compensation element;
• a first wiring pattern connected to the power amplification element;
• a second wiring pattern connected to the temperature compensation element;
• a ground electrode;
• a first semiconductor layer;
• and
• second semiconductor layers existing above the first semiconductor layer in a lamination direction, wherein
• the power amplification element and the temperature compensation element are adjacently provided on the first semiconductor layer,
• the first wiring pattern, the second wiring pattern, and the ground electrode are provided on one of the second semiconductor layers, and
• the ground electrode provided on the one of the second semiconductor layers is arranged between the temperature compensation element and the power amplification element that are provided on the first semiconductor layer in a view from the lamination direction.