Channel surface technique for fabrication of FinFET devices
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsChung Foong Tan, Eng Huat Toh, Jae Gon Lee, Sanford Chu
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Abstract
A FinFET (p-channel) device is formed having a fin structure with sloped or angled sidewalls (e.g., a pyramidal or trapezoidal shaped cross-section shape). When using conventional semiconductor substrates having a (100) surface orientation, the fin structure is formed in a way (groove etching) which results in sloped or angled sidewalls having a (111) surface orientation. This characteristic substantially increases hole mobility as compared to conventional fin structures having vertical sidewalls.
Claims20
A Fin field-effect transistor (FinFET) device comprising:
- a substrate;
- first and second source/drain (S/D) regions of a first conductivity type disposed above the substrate;
- a fin channel structure of semiconductor material disposed above the substrate and extending between the first and second S/D regions, the fin channel structure including a first fin portion, a second fin portion, and a channel portion, the channel portion of a second conductivity type, and the fin channel structure having a bottom surface with a width greater than a width of a top surface;
- a gate structure disposed over the channel portion, the gate structure including a gate dielectric and a gate electrode;
- and
- wherein the fin channel structure comprises first and second angled sidewalls.
A p-channel Fin field-effect transistor (FinFET) device comprising:
- a substrate;
- first and second source/drain (S/D) regions of p-type conductivity disposed above the substrate;
- a fin channel structure of semiconductor material disposed on the substrate and extending between the first and second S/D regions, the fin channel structure including a first fin portion, a second fin portion, and a channel portion of n-type conductivity having a top surface, a bottom surface and two sidewalls each having a sidewall surface, and wherein the bottom surface has a width greater than a width of the top surface;
- a gate structure disposed over the top surface of the channel portion, the gate structure including a gate dielectric and a gate electrode;
- and
- wherein the two sidewall surfaces of the channel portion have a (111) surface orientation and the top surface of the channel portion has a different surface orientation.
A Fin field-effect transistor (FinFET) device comprising:
- a substrate of semiconductor material having a (100) surface orientation;
- first and second source/drain (S/D) regions of a first conductivity type;
- a fin channel structure of semiconductor material disposed on the substrate and extending between the first and second S/D regions, the fin channel structure including a channel portion of a second conductivity-type, the channel portion having a top surface, a bottom surface and two sidewalls each having a sidewall surface, and wherein the bottom surface has a width greater than a width of the top surface;
- a gate structure disposed over the top surface of the channel portion, the gate structure including a gate dielectric and a gate electrode;
- and
- wherein the two sidewall surfaces of the channel portion have a (111) surface orientation and the top surface of the channel portion have a (100) surface orientation.
Dependencies are inferred from the claim text.