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AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Raghavasimhan Sreenivasan, Sufi Zafar
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Non-planar semiconductor FET based sensors are provided that have an enhanced sensing area to volume ratio which results in faster response times than existing planar FET based sensors. The FET based sensors of the present disclosure include a V-shaped gate dielectric portion located in a V-shaped opening formed in a semiconductor substrate. In some embodiments, the FET based sensors of the present disclosure also include a self-aligned source region and a self-aligned drain region located in the semiconductor substrate and on opposing sides of the V-shaped opening. In other embodiments, the FET based sensors include a self-aligned source region and a self-aligned drain region located in the semiconductor substrate and on opposing sides of a gate dielectric material portion that is present on an uppermost surface of the semiconductor substrate.
A semiconductor structure for sensing biomolecules, said semiconductor structure comprising:
A semiconductor structure for sensing biomolecules, said semiconductor structure comprising:
Dependencies are inferred from the claim text.