N-metal film deposition with initiation layer
AssigneeApplied Materials, Inc.
InventorsSeshadri Ganguli, Xinliang Lu, Atif Noori, Maitreyee Mahajani, Shih Chung Chen, Mei Chang
Life of this patent
Estimating the term…
Abstract
Provided are methods of depositing N-Metals onto a substrate. Some methods comprise providing an initiation layer of TaM or TiM layer on a substrate, wherein M is selected from aluminum, carbon, noble metals, gallium, silicon, germanium and combinations thereof; and exposing the substrate having the TaM or TiM layer to a treatment process comprising soaking the surface of the substrate with a reducing agent to provided a treated initiation layer.
Claims17
A method of forming a metal layer on a substrate surface, the method comprising:
- providing an initiation layer of TaM or TiM layer on a substrate, wherein M is selected from aluminum, noble metals, gallium, silicon, germanium and combinations thereof;
- exposing the substrate having the TaM or TiM layer to a treatment process comprising soaking the surface of the substrate with a reducing agent to provide a treated initiation layer;
- and
- depositing a metal layer upon the treated initiation layer, wherein the metal layer comprises a metal alloy selected from the group consisting of TaSix, TiSix, TaGex, and TiGex, wherein the initiation layer or metal layer comprises an aluminum dopant.
A method of depositing a metal layer, the method comprising depositing an initiation layer comprising TaAlC or TaSi doped with aluminum;
- exposing the substrate having the TaAlC or TaSix doped with aluminum initiation layer to a treatment process comprising soaking the surface of the substrate with a reducing agent to provided a treated initiation layer;
- and
- depositing a metal layer upon the treated initiation layer, wherein the metal layer comprises a metal alloy selected from the group consisting of TaSix, TiSix, TaGex, and TiGex.
A method for forming a metal layer on a substrate surface, the method comprising:
- exposing a substrate to a first reactant gas comprising TaCl5;
- exposing the substrate to a second reactant gas comprising triethyl aluminum to form a TaAlC layer on the substrate during an atomic layer deposition process;
- exposing the substrate having the TaAlC layer to a treatment process comprising soaking the surface of the substrate with a reducing agent to provided a treated initiation layer;
- depositing a metal layer, wherein the metal layer comprises a metal alloy selected from the group consisting of TaSix, TiSix, TaGex, and TiGex.
Dependencies are inferred from the claim text.