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US 8,895,392 B2Granted
Method for fabricating semiconductor device
AssigneeSK hynix Inc.
InventorsTae-Yoon Kim, Heung-Jae Cho
Life of this patent
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Abstract
A method for fabricating a semiconductor device including a semiconductor substrate having a trench formed therein. A migration assist layer is formed in the trench and on the substrate. A buried layer in formed in the trench by migrating material from the migration assist layer and the semiconductor substrate.
Claims20
A method for fabricating a semiconductor device, the method comprising:
- forming a trench in a semiconductor substrate;
- forming an insulating layer over a surface of the substrate that defines the trench;
- forming a conductive pattern over the insulating layer such that the conducive pattern fills a part of the trench;
- removing a portion of the insulating layer from sidewalls of the trench above the conductive pattern;
- forming a migration assist layer along the entire surface of the resultant structure that the portion of the insulating layer is removed;
- and
- forming a buried layer in the trench via migrating material from the migration assist layer and the semiconductor substrate.
4 more elements
A method for fabricating a semiconductor device, the method comprising:
- forming a trench in a silicon substrate;
- forming an insulating layer on a surface of the substrate that defines the trench;
- forming a bit line over the insulating layer such that the bit line partially fills a part of the trench;
- forming a first silicon-containing layer over the bit line;
- removing a portion of the insulating layer from sidewalls of the trench above the first silicon-containing layer;
- forming a second silicon-containing layer along the entire surface of the resultant structure that the portion of the insulating layer is removed;
- forming, in the trench, a third silicon-containing layer via migrating material from the second silicon-containing layer and the substrate;
- forming a body line having the bit line buried therein by etching the second silicon-containing layer and the silicon substrate;
- and
- etching the body line to form a pillar including a channel area of a vertical channel transistor.
7 more elements
Dependencies are inferred from the claim text.