Composition for formation of upper layer film, and method for formation of photoresist pattern

A method for formation of photoresist pattern, comprising

• a step of coating a photoresist composition on a substrate to form a photoresist film;
• a step of coating, on the photoresist film, a composition for formation of upper layer film to form an upper layer film;
• and
• a step of placing a liquid immersion medium between the upper layer film and a lens, applying an exposure ray to the photoresist film and the upper layer film via the liquid immersion medium and a mask having a particular pattern, then conducting development to obtain a resist pattern,
• wherein the composition for formation of upper layer film comprises:
• a resin (A) having a repeating unit represented by a following general formula (1-1) and not having a repeating unit represented by a following general formula (1-2);
• and
• a resin (B) having a repeating unit represented by the following general formula (1-2) and not having a repeating unit represented by the following general formula (1-1),
• wherein, in the above general formulas (1-1) and (1-2), R1 is a hydrogen atom, a methyl group or a trifluoromethyl group;
• R2 is a single bond, a methylene group, a linear or branched alkylene group having 2 to 6 carbon atoms, or a group represented by a general formula C(O)XR4, wherein X is an oxygen atom, a sulfur atom or an NH group and R4 is a methylene group, or a linear or branched alkylene group having 2 to 6 carbon atoms;
• and R3 is a linear or branched alkyl group of 1 to 12 carbon atoms, in which at least one hydrogen atom is substituted with a fluorine atom, or an alkyl group of alicyclic structure, having 1 to 12 carbon atoms, in which at least one hydrogen atom is substituted with a fluorine atom.