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US 8,895,209 B2Granted
Mask for use in photolithography, manufacturing method thereof and manufacturing method of devices by using the mask
AssigneeSamsung Display Co., Ltd.
InventorsMin Kang, Jong Kwang Lee, Jin Ho Ju, Bong-Yeon Kim, Hyang-Shik Kong, Kyoung Sik Kim, Seung Hwa Baek
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Abstract
Provided are a photomask, including: a substrate; an opaque pattern formed on the substrate and made of a material which does not penetrate light; a first dielectric layer formed on the substrate and the opaque pattern; and a negative refractive-index meta material layer formed on the first dielectric layer, in which a dispersion mode used in the photomask uses a Quasi bound mode, a manufacturing method of the photomask, and a manufacturing method of a substrate using the photomask.
Claims5
A photomask comprising:
- a substrate;
- an opaque pattern formed on the substrate;
- a first dielectric layer formed on the substrate and on the opaque pattern;
- and
- a negative refractive-index meta material layer formed on the first dielectric layer, associated with an optical transfer function that depends on a spatial frequency, and having a negative refractive index that corresponds to a value of the spatial frequency that is in a range of 0.005 nm−1 to 0.03 nm−1,
- wherein the photomask is structured to operate in a Quasi-bound mode as a dispersion mode, and
- wherein a gap between the uppermost layer of a work target and the photomask is more than 0 and equal to or less than 35 μm.
4 more elements
Dependencies are inferred from the claim text.