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US 8,894,869 B2Granted
Lithography process using directed self assembly
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Sheng Chang, Tsung-Jung Tsai, Chung-Ju Lee, Tien-I Bao
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Abstract
A method includes forming a patterned hard mask layer, with a trench formed in the patterned hard mask layer. A Bulk Co-Polymer (BCP) coating is dispensed in the trench, wherein the BCP coating includes Poly-Styrele (PS) and Poly Methyl Metha Crylate (PMMA). An annealing is performed on the BCP coating to form a plurality of PS strips and a plurality of PMMA strips allocated in an alternating layout. The PMMA strips are selectively etched, with the PS strips left in the trench.
Claims20
A method comprising:
- forming a patterned hard mask layer, with a trench formed in the patterned hard mask layer;
- forming a neutralized layer at a bottom of the trench;
- dispensing a Bulk Co-Polymer (BCP) coating in the trench, with the BCP being over the neutralized layer, wherein the BCP coating comprises Poly-Styrele (PS) and Poly Methyl Metha Crylate (PMMA);
- performing an annealing on the BCP coating to form a plurality of PS strips and a plurality of PMMA strips allocated in an alternating layout;
- and
- selectively etching the PMMA strips, with the PS strips left in the trench.
3 more elements
A method comprising:
- forming a hard mask layer;
- forming and patterning a photo resist over the hard mask layer;
- patterning the hard mask layer to form a trench in the hard mask layer using the photo resist as an etching mask;
- removing the photo resist;
- forming a neutralized layer at a bottom of the trench, with the BCP coating over and contacting the neutralized layer;
- dispensing a Bulk Co-Polymer (BCP) coating in the trench and over the neutralized layer, wherein the BCP coating comprises Poly-Styrele (PS) and Poly Methyl Metha Crylate (PMMA);
- performing an annealing on the BCP coating to form a plurality of PS strips and a plurality of PMMA strips out of the BCP coating, with the plurality of PS strips and the plurality of PMMA strips located alternatingly;
- selectively etching the PMMA strips, with the PS strips left in the trench;
- and
- using the PS strips and the hard mask layer as an etching mask to etch a layer underlying the PS strips and the hard mask layer.
7 more elements
A method comprising:
- forming a non-photo-sensitive layer over an underlying layer;
- patterning the non-photo-sensitive layer to form a trench, with remaining portions of the non-photo-sensitive layer on opposite sides of the trench;
- forming a neutralized layer comprising a first portion at a bottom of the trench, and second portions on sidewalls and top surfaces of the remaining portions of the non-photo-sensitive layer;
- etching back the first portion and the second portions of the neutralized layer to remove the second portions and to thin the first portion of the neutralized layer;
- dispensing a Bulk Co-Polymer (BCP) coating into the trench, with the BCP coating being over the first portion of the neutralized layer;
- performing an annealing on the BCP coating to separate the BCP coating into a first and a second plurality of strips, wherein the first and the second plurality of strips have different compositions, and are located in an alternating layout;
- selectively etching the first plurality of strips, with the second plurality of strips left in the trench;
- etching the neutralized layer and the underlying layer using the second plurality of strips and the non-photo-sensitive layer as an etching mask;
- and
- after the underlying layer is etched, removing the second plurality of strips and the non-photo-sensitive layer.
7 more elements
Dependencies are inferred from the claim text.