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US 8,894,765 B1Granted
High polarization energy storage materials using oriented single crystals
AssigneeTRS Technologies, Inc.
InventorsWesley S. Hackenberger, Edward F. Alberta
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Abstract
A PIN-PMN-PT ferroelectric single crystal and a method of manufacture are disclosed. The PIN-PMN-PT ferroelectric single crystal is oriented and polarized along a single crystallographic direction. The PIN-PMN-PT ferroelectric single crystal ferroelectric has increased remnant polarization.
Claims13
A high energy density single crystal, comprising:
- a PIN-PMN-PT ferroelectric single crystal oriented and polarized along a single crystallographic directions;
- wherein the PIN-PMN-PT ferroelectric single crystal is a rhombohedral PMN-PIN-PT ferroelectric single crystal oriented and polarized singularly along a <111> crystallographic direction and the high energy density single crystal has a remnant polarization value larger than 38 μC/cm2.
A method of forming a high energy density single crystal, comprising:
- growing a PIN-PMN-PT single crystal along a first crystallographic direction;
- and
- orienting and polarizing the PIN-PMN-PT single crystal along a second cyrstallographic directions;
- wherein the PIN-PMN-PT ferroelectric single crystal is a PMN-PIN-PT ferroelectric single crystal oriented and polarized singularly along a <111> or <110> crystallographic direction and the high energy density single crystal has a remnant polarization value larger than 38 μC/cm2.
1 more element
A high energy density single crystal, comprising:
- a PIN-PMN-PT ferroelectric single crystal oriented and polarized along a single crystallographic direction;
- wherein the PIN-PMN-PT ferroelectric single crystal is an orthorhombic PMN-PIN-PT ferroelectric single crystal oriented and polarized singularly along a <110> crystallographic direction and the high energy density single crystal has a remnant polarization value larger than 38 μC/cm2.
Dependencies are inferred from the claim text.