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US 8,828,762 B2Granted
Carbon nanostructure device fabrication utilizing protect layers
AssigneeInternational Business Machines Corporation
InventorsJack O. Chu, Christos D. DiMitrakopoulos, Alfred Grill, Timothy J. McArdle, Dirk Pfeiffer, Katherine L. Saenger, Robert L. Wisnieff
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Abstract
Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing.
Claims14
A method for forming a device structure comprising:
- selecting an insulating substrate having a carbon-based nanostructure layer on an upper surface;
- forming a first layer of a first metal on said carbon-based nanostructure layer;
- forming a first patterned layer having a first pattern on said first layer of a first metal;
- transferring said first pattern to said first layer of a first metal and said carbon-based nanostructure layer to form a first patterned layer of a first metal and a first patterned carbon-based nanostructure layer there under;
- removing said first patterned layer;
- forming a second patterned layer of a second metal over said insulating substrate and said first patterned layer of a first metal;
- said second patterned layer of a second metal having a second pattern comprising a plurality of contacts spaced apart from one another wherein respective contacts have a portion on said first patterned layer of a first metal and a portion on said insulating substrate;
- and
- removing said first patterned layer of a first metal where not covered by said plurality of contacts whereby said first patterned carbon-based nanostructure layer has regions not covered by said first patterned layer of first metal.
6 more elements
Dependencies are inferred from the claim text.