Extreme ultraviolet lithography mask and multilayer deposition method for fabricating same

A mask comprising:

• a substrate;
• and
• a reflective multilayer coating deposited over the substrate, the reflective multilayer coating having a first layer and a second layer deposited over the first layer, wherein the reflective multilayer coating has a phase defect region that includes:
• a first deformation in the first layer at a first location, and
• a second deformation in the second layer at a second location, wherein there is lateral displacement between the second location and the first location.

A lithography method comprising:

• providing a mask having a pattern, wherein the mask includes:
• a substrate having a feature, and
• a reflective multilayer coating deposited over the substrate, the reflective multilayer coating having a first layer and a second layer deposited over the first layer, wherein the reflective multilayer coating has a phase defect region that includes:
• a first deformation in the first layer at a first location, the first deformation based on the feature, and
• a second deformation in the second layer at a second location, the second deformation based on the feature, wherein there is lateral displacement between the second location and the first location, wherein the second deformation is laterally displaced within the reflective multilayer coating such that the second deformation does not overlap the feature;
• and
• projecting radiation onto the mask such that the mask transfers a portion of the radiation to a wafer, thereby transferring the pattern of the mask to the wafer.