Method and system for calibrating exposure system for manufacturing of integrated circuits

A method for determining one or more focus parameters for an exposure system, the exposure system being used in photolithographic processes in manufacturing integrated circuits, the method comprising:

• forming a first plurality of patterns and a second plurality of patterns using the exposure system on a semiconductor wafer, each of the plurality of patterns being associated with one or more known focus parameters, wherein the first plurality of patterns is configured such that a focused portion thereof is shifted in a first direction when the exposure system is out of focus, and the second plurality of patterns is configured such that a focused portion thereof is shifted in a second direction opposite the first direction when the exposure system is out of focus;
• obtaining characteristics for each of the first plurality and the second plurality of patterns using an optical measuring device;
• and
• determining a focus position for the exposure system associated with a minimal relative shift,
• wherein forming the first plurality of patterns includes forming the following plurality of lines and spaces in an order along a first direction:
• a first line having a width that is at a photoresist resolution line width limit;
• a first space having a width that is at a photoresist resolution spacing limit;
• a second line having a width that is at a line width for a critical photo step;
• a second space having a width that is at a normal photoresist spacing resolution;
• a third line having a width that is at a line width for a non-critical photo step;
• a third space having a width that is at a normal photoresist spacing resolution;
• and
• a fourth line having a width that is at a line width for a stable overlay measurement;
• wherein forming the second plurality of patterns includes forming said plurality of lines and spaces in an opposite order along the first direction.