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US 8,803,286 B2Granted
Low cost metal-insulator-metal capacitors
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChewn-Pu Jou, Tse-Hua Lu
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Abstract
A device includes a top metal layer over a substrate; a copper-containing metal feature in the top metal layer; a passivation layer over the top metal layer; and a capacitor. The capacitor includes a bottom electrode including at least a portion in the first passivation layer, wherein the bottom electrode includes aluminum; an insulator over the bottom electrode; and a top electrode over the insulator.
Claims19
A device comprising:
- a substrate;
- a top metal layer over the substrate;
- a copper-containing metal feature in the top metal layer;
- a first passivation layer over the top metal layer;
- and
- a capacitor comprising:
- a bottom electrode comprising at least a portion in the first passivation layer, wherein the bottom electrode comprises aluminum;
- an insulator over the bottom electrode, wherein the insulator comprises an edge overlying the first passivation layer;
- and
- a top electrode over the insulator, wherein the top electrode extends beyond the edge of the insulator, and wherein the top electrode comprises a bottom contacting a top surface of the first passivation layer.
7 more elements
A device comprising:
- a substrate;
- a plurality of metal layers over the substrate and comprising a top metal layer, wherein the top metal layer further comprises:
- a low-k dielectric layer having a k value lower than 3.8;
- and
- a metal line in the low-k dielectric layer;
- a passivation layer over the top metal layer;
- a capacitor comprising:
- a bottom electrode comprising at least a portion in the passivation layer and contacting the metal line, wherein the bottom electrode comprises aluminum;
- an insulator over the bottom electrode;
- and
- a top electrode over the insulator;
- and
- a metal pad comprising:
- a lower portion in the passivation layer and formed of a same material as the bottom electrode;
- and
- an upper portion over and contacting the lower portion, wherein the upper portion is formed of a same material as the top electrode.
13 more elements
A device comprising:
- a top metal layer comprising:
- a low-k dielectric layer having a k value lower than 3.8;
- and
- a copper line in the low-k dielectric layer;
- a passivation layer over the top metal layer;
- and
- a capacitor comprising:
- a bottom electrode in the passivation layer and electrically coupled to the copper line, wherein the bottom electrode comprises a top surface lower than a top surface of the passivation layer, and wherein the bottom electrode comprises top edges level with the top surface of the passivation layer;
- an insulator over the bottom electrode, wherein portions of the insulator extend to directly over portions of the passivation layer;
- and
- a top electrode over the insulator, wherein the bottom electrode and the top electrode comprise aluminum copper, and wherein portions of the insulator and portions of the top electrode extend from inside the passivation layer to directly over portions of the passivation layer.
8 more elements
Dependencies are inferred from the claim text.