Semiconductor device capable of reducing interelectrode leak current and manufacturing method thereof
AssigneeRenesas Electronics Corporation
InventorsHiroto Ohtake, Naoya Inoue, Ippei Kume, Takeshi Toda, Yoshihiro Hayashi
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Abstract
A semiconductor device has a capacitive structure formed by sequentially layering, on a wiring or conductive plug, a lower electrode, a capacitive insulation film, and an upper electrode. The semiconductor device has, as the capacitive structure, a thin-film capacitor having a lower electrode structure composed of an amorphous or microcrystalline film or a laminate of these films formed on a polycrystalline film.
Claims15
A semiconductor device having a capacitive structure formed by layering a lower electrode, a capacitive insulation film, and an upper electrode in order on a wiring or conductive plug, the semiconductor device comprising, as the capacitive structure, a thin-film capacitor having a lower electrode structure comprising:
- a polycrystalline film;
- and
- an amorphous or microcrystalline film formed on the polycrystalline film or a laminate of amorphous and microcrystalline films formed on the polycrystalline film,
- wherein the upper electrode is smaller in dimension than the lower electrode structure in the thin-film capacitor,
- wherein the semiconductor device further comprises a first hard mask film which covers only the upper electrode,
- a second hard mask film which covers the first hard mask film and side surfaces of the upper electrode and the first hard mask film, and
- the capacitive insulation film has a capacitance per unit area between 3 fF/μm2 and 25 fF/μm2.
Dependencies are inferred from the claim text.