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US 8,803,276 B2Granted
Electrostatic discharge (ESD) device and method of fabricating
AssigneeInternational Business Machines Corporation
InventorsShunhua Chang, Kiran V. Chatty, Robert J. Gauthier, Mujahid Muhammad
Life of this patent
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Abstract
A structure and method of fabricating electrostatic discharge (EDS) circuitry in an integrated circuit chip by integrating a lateral bipolar, either a p-n-p with a NMOSFET or a n-p-n with a PMOSFET within a triple well. The lateral bipolar preferably includes diodes at the I/O and/or the VDDs of the circuitry.
Claims13
In a structure of an integrated circuit chip, the structure comprising:
- a substrate with a region of triple wells, N-Wells separated by and isolated from a P-Well therein;
- a MOSFET with a source, drain and gate in the isolated P-Well;
- a lateral p-n-p having a base, emitter and collector in each of the N-Wells and integrated with the MOSFET;
- an input/output pad coupled to the emitters of the lateral p-n-p and to the drain of the MOSFET;
- and
- VDD applied to each of the bases of the lateral p-n-p, the source and the gate of the MOSFET and the collectors of the lateral p-n-p and source of the MOSFET being connected to ground, whereby a parasitic lateral n-p-n turns on and safely discharges ESD current to ground when an ESD event occurs by creating an avalanche generation of carriers near the drain of the P-Well junction and an increase in the lateral p-n-p collector current.
3 more elements
Dependencies are inferred from the claim text.