Plasma-induced damage (PID) protective diode in an open region of a well guard to increase the degree of integration of transustor of semiconductor device

Abstract

To increase the integration degree of a semiconductor device, the semiconductor device having a Plasma-Induced Damage (PID) protective diode includes a well, at least a first transistor region formed over the well, a gate electrode formed over the first transistor region, a well guard disposed to include an open region while surrounding the first transistor region, a diode disposed in the open region, and a metal line configured to electrically connect the gate electrode and the diode. A space between transistor regions may be efficiently reduced, thus increasing the integration degree of a semiconductor device.

Dependencies are inferred from the claim text.