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US 8,803,237 B2Granted
Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsTakafumi Kuramoto, Yasutaka Nakashiba
Life of this patent
Estimating the term…
Abstract
A distance “a” from a first gate electrode of a first transistor of a high-frequency circuit to a first contact is greater than a distance “b” from a second electrode of a second transistor of a digital circuit to a second contact. The first contact is connected to a drain or source of the first transistor, and the second contact is connected to a drain or source of the second transistor.
Claims12
A semiconductor device comprising:
- a first circuit connected to a first power supply terminal and a first ground terminal;
- a second circuit connected to a second power supply terminal and a second ground terminal;
- a first transistor constituting part of the first circuit;
- a second transistor constituting part of the second circuit;
- a first contact connected to a source or drain of the first transistor;
- and
- a second contact connected to a source or drain of the second transistor,
- wherein a minimum distance “a” from a first gate electrode that is a gate electrode of the first transistor to the first contact is greater than a minimum distance “b” from a second gate electrode that is the gate electrode of the second transistor to the second contact and the thickness of gate insulation films of the first transistor and the second transistor are substantially equal.
5 more elements
A semiconductor device comprising:
- a first circuit connected to a first power supply terminal and a first ground terminal;
- a second circuit connected to a second power supply terminal and a second ground terminal;
- a first transistor constituting part of the first circuit;
- a second transistor constituting part of the second circuit;
- a first contact connected to drain of the first transistor;
- and
- a second contact connected to a source or drain of the second transistor,
- a third contact connected to a source of the first transistor,
- wherein a minimum distance “a” from a first gate electrode that is a gate electrode of the first transistor to the first contact is greater than a minimum distance “b” from a second gate electrode that is the gate electrode of the second transistor to the second contact,
- a minimum distance “c” between the third contact and the first gate electrode is greater than the minimum distance “b”, and
- the thickness of gate insulation films of the first transistor and the second transistor are substantially equal.
8 more elements
A semiconductor device comprising:
- a first circuit connected to a first power supply terminal and a first ground terminal;
- a second circuit connected to a second power supply terminal and a second ground terminal;
- a first transistor constituting part of the first circuit;
- a second transistor constituting part of the second circuit;
- a first contact connected to a source or drain of the first transistor;
- and
- a second contact connected to a source or drain of the second transistor,
- wherein a minimum distance “a” from a first gate electrode that is a gate electrode of the first transistor to the first contact is greater than a minimum distance “b” from a second gate electrode that is the gate electrode of the second transistor to the second contact and the thickness of gate insulation films of the first transistor and the second transistor are substantially equal, and
- wherein a magnitude of a power supply voltage to the first circuit and the second circuit is substantially equal.
6 more elements
Dependencies are inferred from the claim text.