Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
AssigneeAdvanced Technology Materials, Inc.
InventorsZiyun Wang, Chongying Xu, Bryan C. Hendrix, Jeffrey F. Roeder, Tianniu Chen, Thomas H. Baum
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Abstract
Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
Claims20
A composition comprising an inert carrier gas and a silicon compound of the formula
- wherein R1, R2 and R3 may be the same as or different from the other and each is independently selected from the group consisting of H, C1-C5 alkyl, C3-C6 cycloalkyl, aryl and arylalkyl;
- and
- X, Y, and Z may be the same as or different from the other and each is independently selected from the group consisting of H, alkyl, alkylamino, dialkylamino and alkylhydrazido;
- with the proviso that when R1, R2, X and Y are methyl groups and R3 is hydrogen, Z cannot be hydrogen, wherein said silicon compound is in a vapor form suitable for use under chemical vapor deposition conditions,
- and further comprising a co-reactant selected from among ammonia, nitric oxide, monoalkylamines, dialkylamines, and trialkyl amines, and mixtures of two or more thereof.
A composition comprising an inert carrier gas and a silicon compound of the formula
- wherein R1, R2 and R3 may be the same as or different from the other and each is independently selected from the group consisting of H, C1-C5 alkyl, C3-C6 cycloalkyl, aryl and arylalkyl;
- and
- each of X, Y and Z is alkylamino, and
- wherein said silicon compound is in a vapor form suitable for use under chemical vapor deposition conditions.
Dependencies are inferred from the claim text.