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US 8,802,565 B2Granted
Semiconductor plural gate lengths
AssigneeInternational Business Machines Corporation
InventorsMichael J. Hartig, Sivananda K. Kanakasabapathy, Soon-Cheon Seo, Raghavasimhan Sreenivasan
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Abstract
Gate structures with different gate lengths and methods of manufacture are disclosed. The method includes forming a first gate structure with a first critical dimension, using a pattern of a mask. The method further includes forming a second gate structure with a second critical dimension, different than the first critical dimension of the first gate structure, using the pattern of the mask.
Claims18
A method, comprising:
- forming a first gate structure with a first critical dimension, using a pattern of a mask;
- and
- forming a second gate structure with a second critical dimension, different than the first critical dimension of the first gate structure, using the pattern of the mask.
A method, comprising:
- forming amorphous silicon on a substrate;
- converting an unmasked portion of the amorphous silicon in a first section to polysilicon;
- and
- patterning the amorphous silicon of a second section and the polysilicon of the first section using a same mask size and pattern, wherein the patterning results in a first critical dimension of the amorphous silicon and a second critical dimension of the polysilicon, wherein the patterning comprises:
- forming a hardmask over the amorphous silicon and the polysilicon;
- forming a resist pattern on the hardmask to form a uniform pattern;
- and
- etching the hardmask, the amorphous silicon and the polysilicon using a same etchant and same pattern of a mask to form a first gate structure with the first critical dimension and a second gate structure with the second critical dimension.
5 more elements
A method, comprising:
- forming amorphous silicon on a substrate;
- converting an unmasked portion of the amorphous silicon in a first section to polysilicon;
- and
- patterning the amorphous silicon of a second section and the polysilicon of the first section using a same mask size and pattern, wherein the patterning results in a first critical dimension of the amorphous silicon and a second critical dimension of the polysilicon,
- wherein the first critical dimension includes an undercut or lateral erosion under an overlying hardmask that was patterned with the amorphous silicon of the second section.
2 more elements
Dependencies are inferred from the claim text.