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US 8,802,476 B2Granted
Semiconductor thermocouple and sensor
AssigneeTexas Instruments Incorporated
InventorDimitar V. Trifonov
Life of this patent
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Abstract
Conventional “on-chip” or monolithically integrated thermocouples are very mechanically sensitive and are expensive to manufacture. Here, however, thermocouples are provided that employ different thicknesses of thermal insulators to help create thermal differentials within an integrated circuit. By using these thermal insulators, standard manufacturing processes can be used to lower cost, and the mechanical sensitivity of the thermocouple is greatly decreased. Additionally, other features (which can be included through the use of standard manufacturing processes) to help trap and dissipate heat appropriately.
Claims15
A method of manufacturing a thermocouple comprising:
- forming a thick dielectric layer and a thin dielectric layer formed over a first portion of a substrate;
- forming a first portion of a first conductive layer that extends over at least a portion of the thin dielectric layer, wherein the first layer is made of a first material having a first Seebeck coefficient;
- forming a second portion of the first conductive layer that extends over at least a portion of the thick dielectric layer;
- forming an oxide layer over the first conductive layer;
- etching the oxide layer to form a first aperture that is generally coextensive with at least a portion of the first conductive layer and the thin dielectric layer and to form a second aperture that is generally coextensive with at least a portion of the first conductive layer and the thick dielectric layer;
- filling the first and second apertures to form first and second conductive paths that is formed between the second conductive layer and the second portion of the first conductive layer, wherein the first and second conductive paths have a second Seebeck coefficient;
- forming a first interconnect path that is coupled to the first portion of the first conductive layer, and wherein the first interconnect path has a third Seebeck coefficient;
- and
- forming a second conductive layer over the oxide layer, wherein the second conductive layer extends over at least a portion of each of the thin dielectric layer and the thick dielectric layer, wherein the second conductive layer is configured to receive infrared radiation so as to create a vertical temperature gradient between the second conductive layer and the substrate,
- forming a second interconnect path that is coupled to the second portion of the first conductive layer;
- and
- etching the second conductive layer to form first and second portions of the second conductive layer that are substantially electrically isolated from one another.
9 more elements
A method comprising:
- forming a thin dielectric layer formed over a first portion of a substrate;
- forming a thick dielectric layer formed over a second portion of the substrate;
- forming a first portion of a first conductive layer that extends over at least a portion of the thin dielectric layer, wherein the first layer is made of a first material having a first Seebeck coefficient;
- forming a second portion of the first conductive layer that extends over at least a portion of the thick dielectric layer;
- forming an oxide layer over the first conductive layer;
- etching the oxide layer to form a first aperture that is generally coextensive with at least a portion of the first conductive layer and the thin dielectric layer and to form a second aperture that is generally coextensive with at least a portion of the first conductive layer and the thick dielectric layer;
- filling the first and second apertures to form first and second conductive paths that is formed between the second conductive layer and the second portion of the first conductive layer, wherein the first and second conductive paths have a second Seebeck coefficient;
- forming a first interconnect path that is coupled to the first portion of the first conductive layer, and wherein the first interconnect path has a third Seebeck coefficient;
- and
- forming a second conductive layer that extends over at least a portion of each of the thin dielectric layer and the thick dielectric layer, wherein the second conductive layer is configured to receive infrared radiation so as to create a vertical temperature gradient between the second conductive layer and the substrate;
- forming a conductive path between the second conductive layer and the second portion of first conductive layers, wherein the conductive path has a second Seebeck coefficient;
- forming a first interconnect path that is coupled to the first portion of the first conductive layer, and wherein the first interconnect path has a third Seebeck coefficient;
- and
- forming a second interconnect path that is coupled to the second portion of the first conductive layer.
11 more elements
Dependencies are inferred from the claim text.