Methods of manufacturing a semiconductor structure

A method of manufacturing an interposer, comprising:

• forming a plurality of through-silicon-vias (TSVs) in an interposer substrate;
• forming one or more wiring layers on a front-side of the interposer substrate;
• forming a micro-bump array on the one or more wiring layers, the one or more wiring layers coupling each of the TSVs to a respective micro-bump of the micro-bump array;
• depositing a layer of conductive adhesive over the micro-bump array and wiring layers, the conductive adhesive electrically coupling contacts of the micro-bump array one to another;
• bonding a carrier to the micro-bump array and wiring layers with the conductive adhesive;
• after bonding the carrier to the substrate, thinning a back-side of the substrate to expose each of the TSVs on the back-side of the substrate;
• forming a C4 solder-bump array on the thinned back-side of the substrate, each of the TSVs coupled to a respective contact of the C4 solder-bump array;
• testing for conductivity between contacts of the C4 solder-bump array, whereby conductivity of the TSVs, wiring layers, micro-bump array and C4 solder-bump array is tested;
• and
• separating the carrier and conductive adhesive from the substrate after the testing.