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US 8,796,820 B2Granted
Semiconductor wafer and semiconductor device wafer
AssigneeHitachi Metals, Ltd.
InventorsShusei Nemoto, Hisashi Mashiyama
Life of this patent
Estimating the term…
Abstract
A semiconductor wafer having a disc shape includes a chamfer provided around a circumferential edge of the wafer, and an anti-cracking and chipping groove provided in one or more areas around one circumference of an end face of the wafer along a circumferential direction of the end face. The anti-cracking and chipping groove is configured to prevent cracking or chipping of the end face in back grinding.
Claims17
A semiconductor wafer having a disc shape, comprising:
- chamfers provided around a circumferential edge of the wafer;
- an anti-cracking and chipping groove provided in one or more areas around one circumference of an end face of the wafer along a circumferential direction of the end face,
- wherein the chamfers include round chamfers provided around boundaries, respectively, between the anti-cracking and chipping groove and the end face of the wafer,
- wherein each of the round chamfers has a curvature radius of not less than 20 μm and not more than 100 μm, and
- wherein a depth of the anti-cracking and chipping groove is not less than 20 μm and not more than 200 μm.
2 more elements
A semiconductor device wafer, comprising:
- a semiconductor wafer including a front surface, a back surface, and a side surface, the back surface of the semiconductor wafer being ground;
- a device structure layer provided over the front surface of the back surface ground semiconductor wafer,
- wherein the side surface of the back surface ground semiconductor wafer is provided with a chamfer having a curvature radius of Rd (μm) satisfying (½)t≦Rd≦(⅗)t, where a thickness of the back surface ground semiconductor wafer is t (μm);
- an anti-cracking and chipping groove provided in at least one area around a circumference of an end face of the semiconductor wafer along a circumferential direction of the end face;
- and
- round chamfers provided around boundaries, respectively, between the anti-cracking and chipping groove and the end face of the semiconductor wafer.
3 more elements
A semiconductor device wafer, comprising:
- a semiconductor wafer including a front surface, a back surface, and a side surface, the back surface of the semiconductor wafer being ground;
- a device structure layer provided over the front surface of the back surface ground semiconductor wafer,
- wherein the side surface of the back surface ground semiconductor wafer includes a front surface boundary with a first chamfer, a back surface boundary with a second chamfer, and an end provided between the front surface boundary and the back surface boundary, and
- wherein the first chamfer and the second chamfer have a curvature radius of Rd(μm) satisfying ( 1/10)t≦Rd≦(½)t, where a thickness of the back surface ground semiconductor wafer is t (μm), and the end has a curvature radius larger than the Rd (μm);
- an anti-cracking and chipping groove provided in at least one area around a circumference of an end face of the semiconductor wafer along a circumferential direction of the end face;
- and
- round chamfers provided around boundaries, respectively, between the anti-cracking and chipping groove and the end face of the semiconductor wafer.
4 more elements
Dependencies are inferred from the claim text.