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US 8,796,806 B2Granted
High-performance diode device structure and materials used for the same
AssigneeMicron Technology, Inc.
InventorsGurtej Sandhu, Bhaskar Srinivasan
Life of this patent
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Abstract
A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there through, and has further characteristics allowing a second decrease in the resistivity of the first material in response to an increase in temperature of the first material.
Claims19
A diode device comprising:
- a first conductive material,
- a heating element over the first conductive material,
- a diode material over the heating element, and
- a second conductive material over the diode material,
- wherein the diode material is selected from the group consisting of a vanadium oxide, an aluminum-doped vanadium oxide, a titanium-doped vanadium oxide and a rare earth manganate represented by the formula Ln(1-x)AxMnO3, wherein Ln represents a rare earth element and A represents an alkaline earth element.
2 more elements
A memory device comprising:
- a plurality of memory elements;
- and
- a plurality of diodes, each diode being a select device for a corresponding memory element,
- wherein each diode comprises:
- a first conductive material,
- a heating element over the first conductive material,
- a diode material over the heating element, and
- a second conductive material over the diode material,
- wherein the diode material is selected from the group consisting of a vanadium oxide, an aluminum-doped vanadium oxide, a titanium-doped vanadium oxide and a rare earth manganate represented by the formula Ln(1-x)AxMnO3, wherein Ln represents a rare earth element and A represents an alkaline earth element.
6 more elements
A memory device comprising:
- a memory element;
- and
- a diode for accessing the memory element,
- wherein the diode comprises:
- a first conductive material;
- a diode material over the first conductive material;
- a heating element over the diode material;
- and
- a second conductive material over the heating element,
- wherein the diode material is selected from the group consisting of a vanadium oxide, an aluminum-doped vanadium oxide, a titanium-doped vanadium oxide and a rare earth manganate represented by the formula Ln(1-x)AxMnO3, wherein Ln represents a rare earth element and A represents an alkaline earth element.
7 more elements
Dependencies are inferred from the claim text.