Electro-static discharge protection device
AssigneeMagnaChip Semiconductor, Ltd.
InventorTae-hoon Kim
Life of this patent
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Abstract
An Electro-Static Discharge (ESD) protection device is provided. The ESD protection device includes a metal-oxide semiconductor (MOS) transistor, including a source area having a surface on which a first silicide is formed, the source area including a source connecting area including a first connecting portion formed on the first silicide, and a source extension area, a gate arranged in parallel with the source area, and a drain area arranged in parallel with the source area and the gate, the drain area having a surface on which a second silicide is formed, the drain area including a drain connecting area formed opposite the source extension area, the drain connecting area including second connection portion formed on the second silicide, and a drain extension area formed opposite the source connecting area.
Claims19
An Electro-Static Discharge (ESD) protection device, comprising:
- a metal-oxide semiconductor (MOS) transistor, comprising:
- a source area having a surface on which a first silicide is formed, the source area comprising:
- a source connecting area comprising a first connecting portion formed on the first silicide;
- and
- a source extension area;
- a gate arranged in parallel with the source area;
- and
- a drain area arranged in parallel with the source area and the gate, the drain area having a surface on which a second silicide is formed, the drain area comprising:
- a drain connecting area formed opposite the source extension area, the drain connecting area comprising second connection portion formed on the second silicide;
- and
- a drain extension area formed opposite the source connecting area,
- wherein the ESD protection device is configured to protect an internal circuit from ESD.
An Electro-Static Discharge (ESD) protection device, comprising:
- a metal-oxide semiconductor (MOS) transistor having a source area, a gate, and a drain area arranged in parallel;
- a first silicide formed on a surface of the source area;
- a second silicide formed on a surface of the drain area;
- a first connector formed on the first silicide;
- and
- a second connector formed on the second silicide such that the second connector is free from facing the first connector,
- wherein:
- the first silicide extends to a source extension area on the source area that faces the second connector;
- and
- the second silicide extends to a drain extension area on the drain area that faces the first connector.
Dependencies are inferred from the claim text.