Low leakage, low capacitance electrostatic discharge (ESD) silicon controlled recitifer (SCR), methods of manufacture and design structure

A method comprising:

• providing a silicon on insulator (SOI) substrate, which comprises a buried dielectric layer between an upper silicon film and a lower silicon based substrate;
• forming deep trench isolation structures within the upper silicon film and extending to contact an upper surface of the buried dielectric layer;
• and
• forming a string of diodes in the upper silicon film by forming wells in the upper silicon film, between the deep trench isolation structures, and forming p+ and n+ regions in the well, separated by a shallow trench isolation structure,
• wherein the deep trench isolation structures provide vertical isolation between each of the diodes in the string of diodes, and the buried dielectric layer provides horizontal isolation between the well of each diode and the lower silicon based substrate to prevent loss of current.

A structure, comprising:

• a buried dielectric layer between an upper substrate and a lower substrate;
• deep trench isolation structures extending from an upper surface of the upper substrate to contact a surface of the buried dielectric layer;
• and
• a plurality of shallow trench isolation bounded diodes in the upper substrate, which are each isolated from one another by the deep trench isolation structures and isolated from the lower substrate by the buried dielectric layer.