US 8,796,156 B2 · Cross OD FinFET patterning

Abstract

A method of forming an integrated circuit structure includes providing a semiconductor substrate; providing a first lithography mask, a second lithography mask, and a third lithography mask; forming a first mask layer over the semiconductor substrate, wherein a pattern of the first mask layer is defined using the first lithography mask; performing a first etch to the semiconductor substrate to define an active region using the first mask layer; forming a second mask layer having a plurality of mask strips over the semiconductor substrate and over the active region; forming a third mask layer over the second mask layer, wherein a middle portion of the plurality of mask strips is exposed through an opening in the third mask layer, and end portions of the plurality of mask strips are covered by the third mask layer; and performing a second etch to the semiconductor substrate through the opening.

Claims13

Dependent claims

A method comprising:

forming an insulation layer over a semiconductor substrate;
forming a hard mask over the insulation layer;
performing a first patterning step on the hard mask and the insulation layer to form a first trench, wherein the semiconductor substrate is exposed through the first trench;
filling the first trench with a filling material;
patterning the hard mask to expose a portion of the insulation layer;
removing the portion of the insulation layer exposed through the hard mask to form a second trench, wherein the semiconductor substrate is exposed through the second trench;
removing the hard mask and the filling material to expose portions of the semiconductor substrate;
and
epitaxially growing a semiconductor material from exposed portions of the semiconductor substrate.

6 more elements

Dependencies are inferred from the claim text.

Cross OD FinFET patterning

Life of this patent

Cross OD FinFET patterning

Life of this patent

Abstract

Claims13