Methods of forming integrated circuit devices using modified rectangular mask patterns to increase reliability of contacts to electrically conductive lines
AssigneesSamsung Electronics Co., Ltd., International Business Machines Corporation
InventorsChang-Hwa Kim, Ryan L. Burns
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Abstract
Methods of forming integrated circuit devices include forming first and second electrically conductive lines at side-by-side locations on an integrated circuit substrate. Steps are performed to selectively etch each of the first and second electrically conductive lines into a respective pair of interconnects having facing ends that are separated from each other. This selective etching step is performed using a photolithography mask having a modified-rectangular mask pattern thereon, which is configured to define a shape of the facing ends of each of the pair of interconnects.
Claims20
A method of forming an integrated circuit device, comprising:
- forming first and second electrically conductive line segments that extend in parallel at side-by-side locations on a substrate;
- and
- selectively etching each of the first and second line segments into a respective pair of electrical interconnects having facing ends that are separated from each other, using a photolithography mask having a modified-rectangular mask pattern thereon configured to define a shape of the facing ends of each of the pair of electrical interconnects, said modified-rectangular mask pattern comprising a composite of:
- a rectangular-shaped primary mask pattern having first sides of a first length and second sides of a second length less than the first length;
- and
- a first rectangular-shaped secondary mask pattern on a first side of said rectangular-shaped primary mask pattern, said first rectangular-shaped secondary mask pattern having third sides of a third length less than the first length and fourth sides of a fourth length less than the third length.
A method of forming an integrated circuit device, comprising:
- forming an electrically conductive line segment on the substrate;
- and
- cutting the electrically conductive line segment into a pair of electrical interconnects having facing ends that are separated from each other, using a photolithography mask having a modified-rectangular mask pattern thereon configured to define a shape of the facing ends of the pair of electrical interconnects, said modified-rectangular mask pattern comprising a composite of:
- a rectangular-shaped primary mask pattern having first sides of a first length and second sides of a second length less than the first length;
- and
- a first rectangular-shaped secondary mask pattern on a first side of said rectangular-shaped primary mask pattern, said first rectangular-shaped secondary mask pattern having third sides of a third length less than the first length and fourth sides of a fourth length less than the third length.
Dependencies are inferred from the claim text.