Method of producing a three-dimensional integrated circuit
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorBernard Previtali
Life of this patent
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Abstract
Method of producing an integrated electronic circuit comprising at least the steps of: producing a substrate comprising at least a first and second layer of semiconductor between which at least a third layer of material is placed, then producing at least a first MOS device, an active area of which is formed in at least part of the first layer of semiconductor, then producing at least a second MOS device, an active area of which is formed in at least part of the second layer of semiconductor, the active area of the second MOS device being placed between a gate of the second MOS device and the active area of the first MOS device.
Claims15
A method of producing an integrated electronic circuit comprising at least the steps of:
- producing a substrate comprising at least a first and second layer of semiconductor between which at least a third layer of material is placed, the at least a third layer being in contact with the first and second layers and having a different composition than the first and second layers, then
- producing at least a first MOS device, an active area of which is formed in at least part of the first layer of semiconductor, then
- producing at least a second MOS device, an active area of which is formed in at least part of the second layer of semiconductor, the active area of the second MOS device being placed between a gate of the second MOS device and the active area of the first MOS device.
A method of producing an integrated electronic circuit comprising at least the steps of:
- producing a substrate comprising at least a first and second layer of semiconductor, between which at least a third layer of material is placed, then
- producing at least a first MOS device, an active area of which is formed in at least part of the first layer of semiconductor, then
- producing at least a second MOS device, an active area of which is formed in at least part of the second layer of semiconductor, the active area of the second MOS device being placed between a gate of the second MOS device and the active area of the first MOS device when the first MOS device is produced, the first layer of semiconductor and the at least a third layer are etched according to a same pattern corresponding to the active area of the first MOS device.
A method of producing an integrated electronic circuit comprising at least the steps of:
- producing a substrate comprising at least a first and second layer of semiconductor, between which at least a third layer of material is placed, then
- producing at least a first MOS device, an active area of which is formed in at least part of the first layer of semiconductor, then
- producing at least a second MOS device, an active area of which is formed in at least part of the second layer of semiconductor, the active area of the second MOS device being placed between a gate of the second MOS device and the active area of the first MOS device when the first MOS device is produced, the first and second layers of semiconductor and the at least a third layer are etched according to a same pattern corresponding to the active areas of the first and second MOS devices.
A method of producing an integrated electronic circuit comprising at least the steps of:
- producing a substrate comprising at least a first and second layer of semiconductor, between which at least a third layer of material is placed, then
- producing at least a first MOS device, an active area of which is formed in at least part of the first layer of semiconductor, then
- producing at least a second MOS device, an active area of which is formed in at least part of the second layer of semiconductor, the active area of the second MOS device being placed between a gate of the second MOS device and the active area of the first MOS device, the at least a third layer comprises regions with different thicknesses such that, when the method comprises the production of several first MOS devices and several second MOS devices, the distances between the active areas of a first and second MOS device produced one above the other correspond to the various thicknesses of the at least a third layer.
Dependencies are inferred from the claim text.