Back to results
US 8,796,104 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeDongbu HiTek Co., Ltd.
InventorChang Eun Lee
Life of this patent
Estimating the term…
Abstract
A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes a first insulation layer on or over a semiconductor substrate, metal patterns on or over the first insulation layer, a thin film resistor pattern disposed on or over the metal patterns, and an anti-reflection layer between the thin film resistor pattern and the metal patterns.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a first insulation layer on or over a semiconductor substrate;
- depositing a metal layer on or over the first insulation layer and patterning the metal layer to form metal patterns;
- forming a second insulation layer on or over the first insulation layer and the metal patterns;
- depositing and patterning an anti-reflection layer on or over the second insulation layer;
- forming a third insulation layer on or over the anti-reflection layer;
- and
- forming a thin film resistor layer on or over the third insulation layer and patterning the thin film resistor layer to form a thin film resistor pattern, wherein the patterned anti-reflection layer corresponds to a periphery of the thin film resistor pattern.
4 more elements
Dependencies are inferred from the claim text.