Integrated method for forming metal gate FinFET devices

A method for forming a semiconductor device comprising:

• forming a semiconductor fin over a substrate;
• forming a metal gate structure over said semiconductor fin;
• forming a thin nitride layer directly on said semiconductor fin and said metal gate structure and implanting dopant impurities into said semiconductor fin through said thin nitride layer prior to forming any spacers alongside said metal gate structure;
• and
• forming spacers comprising said thin nitride layer alongside said metal gate structure.

A method for forming a semiconductor device comprising:

• forming a semiconductor fin over a substrate;
• forming a metal gate structure over said semiconductor fin, said metal gate structure comprising a high-k gate dielectric, a metal gate film over said high-k gate dielectric and a polysilicon gate over said metal gate film;
• prior to forming any spacers alongside said metal gate structure, forming a thin nitride layer directly on said semiconductor fin and said metal gate structure and implanting dopant impurities into said semiconductor fin through said thin nitride layer;
• forming a further nitride layer over said thin nitride layer;
• and
• forming spacers comprising said thin nitride layer and said further nitride layer alongside said metal gate structure.