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US 8,796,093 B1Granted
Doping of FinFET structures
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek
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Abstract
A FinFET structure is fabricated using a process that facilitates the effective doping of fin structures. A doped layer is annealed to drive dopants into the fins. The doped layer is removed following annealing. Subsequent to removal of the doped layer, doped semiconductor material is grown epitaxially on the side walls of the fins, forming doped regions extending laterally from the fin side walls. Growth of the semiconductor material may be timed to form diamond-shaped, unmerged epitaxy.
Claims22
A method comprising:
- obtaining a structure comprising a substrate including an electrically insulating layer, a plurality of parallel fins comprised of a semiconductor material, each of the plurality of parallel fins having a base portion adjoining the electrically insulating layer, and one or more gate structures extending between the plurality of parallel fins;
- epitaxially forming a faceted doped layer on the plurality of parallel fins and merging the plurality of parallel fins, the faceted doped layer being comprised of a doped material selective with respect to the plurality of parallel fins;
- causing dopants from the faceted doped layer to be driven into the plurality of parallel fins, thereby uniformly doping the plurality of parallel fins, including the base portions of the plurality of parallel fins;
- removing the faceted doped layer, and
- epitaxially forming doped source/drain regions on the plurality of parallel fins subsequent to removing the faceted doped layer.
2 more elements
A method comprising:
- obtaining a structure comprising a substrate including an electrically insulating layer, a plurality of parallel fins extending from the substrate and comprised of a semiconductor material, the plurality of parallel fins having a base portion adjoining the electrically insulating layer, side walls and top surfaces, one or more channels defined by the side walls of the plurality of parallel fins, and an epitaxial faceted doped layer within the one or more channels and contacting the plurality of parallel fins such that the epitaxial faceted doped layer and plurality of parallel fins form a merged structure;
- causing dopants from the epitaxial faceted doped layer to be driven into the plurality of parallel fins, thereby uniformly doping the plurality of parallel fins, including the base portions of the plurality of parallel fins;
- removing the epitaxial faceted doped layer, and
- epitaxially forming isolated doped source/drain regions on the side walls of the plurality of parallel fins subsequent to removing the epitaxial faceted doped layer.
1 more element
Dependencies are inferred from the claim text.