Reflection-type photomasks and methods of fabricating the same
AssigneeSK hynix Inc.
InventorsChoong Han Ryu, Yong Dae Kim
Life of this patent
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Abstract
Reflection-type photomasks are provided. The reflection-type photomask includes a substrate and a reflection layer on a front surface of the substrate. The substrate includes a pattern transfer region, a light blocking region and a border region. A trench penetrates the reflection layer in the border region to expose the substrate. First absorption layer patterns are disposed on the reflection layer in the pattern transfer region, and a second absorption layer pattern is disposed on the reflection layer in the light blocking region. Sidewalls of the trench have a sloped profile. Related methods are also provided.
Claims24
A reflection-type photomask comprising:
- a substrate including a pattern transfer region, a light blocking region and a border region;
- a reflection layer on a front surface of the substrate;
- a trench penetrating the reflection layer in the border region to expose the substrate;
- first absorption layer patterns on the reflection layer in the pattern transfer region;
- and
- a second absorption layer pattern on the reflection layer in the light blocking region,
- wherein sidewalls of the trench have a sloped profile.
A reflection-type photomask comprising:
- a substrate including a pattern transfer region having image patterns corresponding to patterns which are formed on a wafer, a light blocking region surrounding the pattern transfer region, and a border region between the pattern transfer region and the light blocking region;
- a reflection layer on a front surface of the substrate;
- a trench penetrating the reflection layer in the border region to separate the reflection layer into two portions;
- and
- absorption layer patterns on the reflection layer,
- wherein at least one of both sidewalls of the trench has a sloped profile.
A method of fabricating a reflection-type photomask, the method comprising:
- forming a reflection layer and an absorption layer on a substrate including a pattern transfer region having image patterns corresponding to patterns which are formed on a wafer, a light blocking region surrounding the pattern transfer region, and a border region between the pattern transfer region and the light blocking region;
- removing portions of the absorption layer in the pattern transfer region to form absorption layer patterns;
- and
- removing the absorption layer and the reflection layer in the border region to form a trench exposing the substrate in the border region,
- wherein at least one of both sidewalls of the reflection layer exposed by the trench is formed to have a negative sloped profile.
Dependencies are inferred from the claim text.