Method for manufacturing semiconductor device on the basis of changed design layout data

A method of manufacturing a semiconductor device comprising:

• measuring an electrical characteristic of a plurality of semiconductor elements;
• defining layout parameters on the basis of layout data of the plurality of semiconductor elements and deciding a functional relationship between the layout parameters and the electrical characteristic;
• extracting values of the layout parameters from design layout data of the semiconductor device;
• calculating a predicted electrical characteristic of the semiconductor device on the basis of the values of the layout parameters and the functional relationship;
• calculating a difference between a target electrical characteristic and the predicted electrical characteristic of the semiconductor device;
• obtaining a second mapping relationship from the electrical characteristic to the layout parameters, which is an inverse function of a first mapping relationship from the layout parameters to the electrical characteristic, based on the first mapping relationship;
• generating, by using the second mapping relationship, a plurality of candidates of the values of the layout parameters which make the predicted electrical characteristic approximate to the target electrical characteristic;
• selecting a specific value from among the candidates so as to decrease the difference between the target electrical characteristic and the predicted electrical characteristic;
• changing the design layout data based on the specific value;
• manufacturing the semiconductor device on the basis of the changed design layout data;
• calculating a partial differential coefficient by differentiating the functional relationship with respect to the layout parameters;
• and
• selecting the specific value in a range where the partial differential coefficient is equal to or larger than a predetermined reference value in a direction in which square of the difference decreases.