Heat treatment method and heat treatment apparatus for heating substrate by light irradiation
AssigneeDainippon Screen Mfg. Co., Ltd.
InventorShinichi Kato
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AssigneeDainippon Screen Mfg. Co., Ltd.
InventorShinichi Kato
Estimating the term…
A semiconductor wafer in which a carbon thin film is formed on a surface of a silicon substrate implanted with impurities is irradiated with flash light emitted from flash lamps. Absorbing the flash light causes the temperature of the carbon thin film to increase. The surface temperature of the silicon substrate implanted with impurities is therefore increased to be higher than that in a case where no thin film is formed, and the sheet resistance value can be thereby decreased. When the semiconductor wafer with the carbon thin film formed thereon is irradiated with flash light in high concentration oxygen atmosphere, since the carbon of the thin film is oxidized to be vaporized, removal of the thin film is performed concurrently with flash heating.
A heat treatment apparatus for heating a substrate implanted with impurities by irradiating the substrate with flash light, comprising:
A heat treatment apparatus for heating a substrate implanted with impurities by irradiating the substrate with flash light, comprising:
Dependencies are inferred from the claim text.