High reliability etched-facet photonic devices

A photonic device comprising:

• a substrate;
• a semiconductor structure on said substrate;
• a protective layer;
• and
• a metallization layer;
• said semiconductor structure comprising:
• a top surface;
• an active layer located below said top surface;
• a cladding region located below said active layer;
• at least one etched facet defining at least one side surface of said semiconductor structure;
• and
• at least one etched wall defining remaining side surfaces of said semiconductor structure;
• wherein said side surfaces are formed on a first portion of said semiconductor structure including said active layer and a second portion of said semiconductor structure extends laterally beyond said side surfaces;
• wherein said protective layer is a single continuous layer of deposited dielectric material completely covering said side surfaces and said top surface of said semiconductor structure except for a contact window defined by said protective layer on said top surface of said semiconductor structure, wherein said contact window is spaced away from and does not extend to said side surfaces;
• wherein said metallization layer completely covers said contact window and extends over onto said protective layer to completely seal said contact window;
• wherein said single continuous layer of deposited dielectric material also extends over said substrate and completely covers said substrate within 750 nm of said at least one etched facet.