Laser diode using zinc oxide nanorods and manufacturing method thereof
AssigneeDongguk University Industry-Academic Cooperation Foundation
InventorsSang Wuk Lee, Tae Won Kang, Gennady Panin, Hak Dong Cho
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Abstract
Provided are a laser diode using zinc oxide nanorods and a manufacturing method thereof. The laser diode using zinc oxide nanorods according to one embodiment of the present disclosure includes: a wafer; an electrode layer formed on the wafer; a nanorod layer including a plurality of n-doped zinc oxide nanorods grown on the electrode layer; and a p-doped single crystal semiconductor layer that is physically in contact with the ends of the zinc oxide nanorods.
Claims22
A laser diode using zinc oxide nanorods, comprising:
- a wafer;
- an electrode layer formed on the wafer;
- a nanorod layer comprising a plurality of n-doped zinc oxide nanorods grown on the electrode layer;
- a p-doped single crystal semiconductor layer that is physically in contact with ends of the zinc oxide nanorods;
- and
- metal layers formed on a bottom surface of the wafer and on the top surface of the single crystal semiconductor layer, after fixing the single crystal semiconductor layer to the nanorod layer,
- wherein the p-doped single crystal semiconductor layer is substantially planar and the metal layer is subjected to heat treatment to form ohmic junction.
A laser diode using zinc oxide nanorods, comprising:
- a graphite wafer;
- a nanorod layer comprising a plurality of n-doped zinc oxide nanorods grown on the graphite wafer;
- a p-doped single crystal semiconductor layer that is physically in contact with ends of the zinc oxide nanorods;
- and
- metal layers formed on a bottom surface of the wafer and on the top surface of the single crystal semiconductor layer, after fixing the single crystal semiconductor layer to the nanorod layer,
- wherein the p-doped single crystal semiconductor layer is substantially planar and the metal layer is subjected to heat treatment to form ohmic junction.
A method for fabricating a laser diode using zinc oxide nanorods, comprising:
- forming an electrode layer on a wafer;
- growing a plurality of n-doped zinc oxide nanorods on the electrode layer to form a nanorod layer;
- allowing a p-doped single crystal semiconductor layer to be in contact with the nanorod layer;
- applying a predetermined level of pressure to a top surface of the single crystal semiconductor layer to fix the single crystal semiconductor layer to the nanorod layer;
- and
- forming metal layers on a bottom surface of the wafer and on the top surface of the single crystal semiconductor layer, after fixing the single crystal semiconductor layer to the nanorod layer;
- and
- subjecting the metal layer to heat treatment to form ohmic junction,
- wherein the p-doped single crystal semiconductor layer is substantially planar.
A method for fabricating a laser diode using zinc oxide nanorods, comprising:
- growing a plurality of n-doped zinc oxide nanorods on a graphite wafer to form a nanorod layer;
- allowing a p-doped single crystal semiconductor layer to be in contact with the nanorod layer;
- applying a predetermined level of pressure to the top surface of the single crystal semiconductor layer to fix the single crystal semiconductor layer to the nanorod layer;
- and
- forming metal layers on a bottom surface of the wafer and on the top surface of the single crystal semiconductor layer, after fixing the single crystal semiconductor layer to the nanorod layer;
- and
- subjecting the metal layer to heat treatment to form ohmic junction, wherein the p-doped single crystal semiconductor layer is substantially planar.
Dependencies are inferred from the claim text.