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US 8,787,095 B2Granted
Systems, and devices, and methods for programming a resistive memory cell
AssigneeMicron Technology, Inc.
InventorXiaonan Chen
Life of this patent
Estimating the term…
Abstract
Embodiments disclosed herein may relate to programming a memory cell with a programming pulse that includes a quenching period. The quenching period includes an initial portion and a subsequent portion, with the subsequent portion different than the initial portion. During the initial portion, the amplitude of the programming pulse may be reduced to a first target amplitude level, and during the subsequent portion, the amplitude of the programming pulse may be further reduced to a second target amplitude level.
Claims19
A method, comprising:
- programming a memory cell with a sequence of electrical pulses, wherein the sequence comprises a set electrical pulse, and wherein the sequence also comprises an electrical pulse, wherein the electrical pulse comprises a quenching period including an initial portion and a subsequent portion, wherein the subsequent portion is different than the initial portion.
A memory device, comprising:
- a memory array comprising a plurality of memory cells;
- and
- a control unit to program a memory cell of the plurality of memory cells using an electrical pulse, wherein the electrical pulse comprises a quenching period including an initial portion and a subsequent portion, the subsequent portion being different than the initial portion and having a durations of time equal to or greater than approximately 50 ns.
A system, comprising:
- a processor to generate a memory access command;
- and
- a memory device comprising a plurality of memory cells, wherein the memory device is communicatively coupled to the processor;
- the memory device to program a memory cell of the plurality of memory cells with a sequence of electrical pulses at least in part in response to receiving the memory access command, wherein the sequence comprises a set electrical pulse, and wherein the sequence also comprises an electrical pulse, wherein a fall time of an initial portion of a quenching period of the electrical pulse is less than a fall time of a subsequent portion of the quenching period.
1 more element
Dependencies are inferred from the claim text.